Samsung may soon increase the density of DRAM and NAND memory chips to “extreme levels.” The South Korean giant spoke about this on the eve of the Samsung Memory Tech Day 2023 event. It’s no secret that Samsung is developing solutions to increase memory density and the capacity of SSD drives. Earlier this year, the company revealed its long-term plans to develop solid-state drives that can potentially hold one petabyte (1PB) of data, or 1,024 terabytes (TB) or 1,048,576 gigabytes (GB).
President of Samsung Electronics' DRAM Products and Technologies Division, Jung-Bae Lee, confirmed that the South Korean manufacturer is looking for ways to introduce DRAM modules with capacities up to 1 TB. These modules, in turn, bring us closer to the implementation of plans to produce solid-state drives with a capacity of 1 PB. Samsung is expected to showcase its latest technology on October 20 at an event in Silicon Valley, California. According to Jung-Bae Lee, the 11nm DRAM technology currently under development will provide the industry's highest level of memory density.
Today's highest-density DRAM chips have a capacity of 512 GB. They were developed by Samsung back in 2021, and the company is now looking to double down on its achievements with new chip packaging technologies and smaller die sizes. Samsung is developing the highest density 9th generation V-NAND that can be implemented in a dual-stack structure. Such solutions are created for hyperscale AI, and for ordinary consumers, the company has a new T9 shockproof portable SSD with a capacity of 4 TB.